pnp :
An PNP-type bipolar junction transistor.
The pnp primitive represents a three-terminal PNP-type bipolar junction transistor. It implements an approximate Ebers-Moll transistor model described below:
Ic = Is*(exp(-Vbe/(N*VT))-1) - (1+1/Br)*Is*(exp(-Vbc/(N*VT))-1)
Ie = (1+1/Bf)*Is*(exp(-Vbe/(N*VT))-1) - Is*(exp(-Vbc/(N*VT))-1)
Ib = Ie - Ic
where VT = kT/q (25.695mV at 25C)
In the equations above, Is and VT change with the global parameter `global_temp, defining the temperature in Celsius (default: 25C). Specifically, the thermal voltage VT is proportional to the absolute temperature and the transport saturation current Is is proportional to exp(-VG0/VT), where VG0 is assumed to be 1.205V for silicon.
The parameters abstol and reltol set the error tolerance approximating these equations.
This primitive is a pseudo-module to describe a structural netlist of electrical circuits and not a behavioral model by itself. The XMODEL simulator extracts an event-driven behavioral model at run-time based on the circuit network described by these circuit-level pseudo-modules.
Input/Output Terminals
| Name | I/O | Type | Description |
| c | input | xreal | collector |
| b | input | xreal | base |
| e | input | xreal | emitter |
| s | input | xreal | substrate |
Parameters
| Name | Type | Default | Unit | Description |
| Is | real | 1e-16 | A | transport saturation current at T=25C |
| N | real | 1.0 | None | emission coefficient |
| Bf | real | 100.0 | None | forward beta |
| Br | real | 1.0 | None | reverse beta |
| Va | real | `INFINITY | V | Early voltage |
| Cbe | real | 0.0 | farad | base-emitter capacitance |
| Cbc | real | 0.0 | farad | base-collector capacitance |
| Ccs | real | 0.0 | farad | collector-substrate capacitance |
| Cbs | real | 0.0 | farad | base-substrate capacitance |
| Ces | real | 0.0 | farad | emitter-substrate capacitance |
| abstol | real | 1e-9 | A | absolute tolerance |
| reltol | real | 0.1 | None | relative tolerance |
| m | real | 1.0 | None | multiplicity factor |