npn :
An NPN-type bipolar junction transistor.
The npn
primitive represents a three-terminal NPN-type bipolar junction transistor. It implements an approximate Ebers-Moll transistor model described below:
Ic = Is*(exp(Vbe/(N*VT))-1) - (1+1/Br)*Is*(exp(Vbc/(N*VT))-1) Ie = (1+1/Bf)*Is*(exp(Vbe/(N*VT))-1) - Is*(exp(Vbc/(N*VT))-1) Ib = Ie - Ic where VT = kT/q (25.695mV at 25C)
In the equations above, Is
and VT
change with the global parameter `global_temp
, defining the temperature in Celsius (default: 25C). Specifically, the thermal voltage VT
is proportional to the absolute temperature and the transport saturation current Is
is proportional to exp(-VG0/VT), where VG0 is assumed to be 1.205V for silicon.
The parameters abstol
and reltol
set the error tolerance approximating these equations.
This primitive is a pseudo-module to describe a structural netlist of electrical circuits and not a behavioral model by itself. The XMODEL simulator extracts an event-driven behavioral model at run-time based on the circuit network described by these circuit-level pseudo-modules.
Input/Output Terminals
Name | I/O | Type | Description |
c | input | xreal | collector |
b | input | xreal | base |
e | input | xreal | emitter |
s | input | xreal | substrate |
Parameters
Name | Type | Default | Unit | Description |
Is | real | 1e-16 | A | transport saturation current at T=25C |
N | real | 1.0 | None | emission coefficient |
Bf | real | 100.0 | None | forward beta |
Br | real | 1.0 | None | reverse beta |
Va | real | `INFINITY | V | Early voltage |
Cbe | real | 0.0 | farad | base-emitter capacitance |
Cbc | real | 0.0 | farad | base-collector capacitance |
Ccs | real | 0.0 | farad | collector-substrate capacitance |
Cbs | real | 0.0 | farad | base-substrate capacitance |
Ces | real | 0.0 | farad | emitter-substrate capacitance |
abstol | real | 1e-9 | A | absolute tolerance |
reltol | real | 0.1 | None | relative tolerance |
m | real | 1.0 | None | multiplicity factor |