pmosfet :
An p-type MOSFET transistor.
The pmosfet
primitive represents a four-terminal p-channel MOSFET.
The current version implements an approximate EKV transistor model, consisting of two transconductance stages with rectified linear characteristics:
Id1 = KP * W/L * (Vgs - Vth) if Vgs > Vth Id2 = KP * W/L * (Vgd - Vth) if Vgd > Vth Ids = Id1 - Id2
Each capacitance parameter (Cgs, Cgd, Cgb, Csb, Cdb) is an array of three real-typed values each expressing the capacitance between the corresponding terminals of the transistor operating in cut-off, linear, and saturation region, respectively.
This primitive is a pseudo-module to describe a structural netlist of electrical circuits and not a behavioral model by itself. The XMODEL simulator extracts an event-driven behavioral model at run-time based on the circuit network described by these circuit-level pseudo-modules.
Input/Output Terminals
Name | I/O | Type | Description |
d | input | xreal | drain |
g | input | xreal | gate |
s | input | xreal | source |
b | input | xreal | bulk |
Parameters
Name | Type | Default | Unit | Description |
W | real | 1e-6 | m | channel width |
L | real | 1e-6 | m | channel length |
Kp | real | 1e-3 | A/V | intrinsic transconductance |
Kp_data | real | ‘{0.0} | A/V | intrinsic transconductance data |
Vth | real | 0.0 | V | threshold voltage |
Ro | real | `INFINITY | V | output resistance |
Cgs | real_array | ‘{0.0,0.0,0.0} | farad/m | G-to-S capacitance per width (off,lin,sat) |
Cgd | real_array | ‘{0.0,0.0,0.0} | farad/m | G-to-D capacitance per width (off,lin,sat) |
Cgb | real_array | ‘{0.0,0.0,0.0} | farad/m | G-to-B capacitance per width (off,lin,sat) |
Csb | real_array | ‘{0.0,0.0,0.0} | farad/m | S-to-B capacitance per width (off,lin,sat) |
Cdb | real_array | ‘{0.0,0.0,0.0} | farad/m | D-to-B capacitance per width (off,lin,sat) |